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參數(shù)資料
| 型號： | IRFBC30 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET |
| 中文描述： | ? - 600V的通道- 1.8歐姆- 3.6A -到220 PowerMESH]二MOSFET的 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 85K |
| 代理商： | IRFBC30 |
IRFBC30
N - CHANNEL 600V - 1.8
- 3.6A - TO-220
PowerMESH
ΙΙ
MOSFET
I
TYPICAL R
DS(on)
= 1.8
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
ΙΙ
is the evolution of the first
generation of MESH OVERLAY
. The layout
refinements
introduced
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
greatly
improve
the
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVER
INTERNAL SCHEMATIC DIAGRAM
January 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
600
600
±
20
3.6
2.3
14
75
0.6
3
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
dv/dt(
1
)
T
stg
T
j
(
1
) I
SD
≤
3.6
A,di/dt
≤
60 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 2.2
I
D
IRFBC30
600 V
3.6 A
1
2
3
TO-220
1/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFBC30 | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) |
| IRFBC30AS | Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) |
| IRFBC30L | Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) |
| IRFBC40 | N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET |
| IRFBC40 | 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFBC30A | 功能描述:MOSFET N-Chan 600V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC30AL | 功能描述:MOSFET N-Chan 600V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC30ALPBF | 功能描述:MOSFET N-Chan 600V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC30APBF | 功能描述:MOSFET N-Chan 600V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC30AS | 功能描述:MOSFET N-Chan 600V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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