參數(shù)資料
型號： IRFB17N60K
廠商： International Rectifier
英文描述： SMPS MOSFET
中文描述： MOSFET的開關(guān)電源
文件頁數(shù)： 2/8頁
文件大小： 525K
代理商： IRFB17N60K
2
www.irf.com
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 17A, V
GS
= 0V
T
J
= 25°C, I
F
= 17A
di/dt = 100A/μs
T
J
= 125°C, I
F
= 17A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
rr
Q
rr
t
on
–––
–––
––– 5620 8430
–––
580
––– 6470 9700
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
520
1.5
780
V
ns
nC
ns
nC
870
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
g
fs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
600
–––
–––
0.60
–––
0.35 0.42
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
μA
μA
5.0
50
250
100
-100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 2.3mH, R
G
= 25
,
I
AS
= 17A,
I
SD
≤
17A, di/dt
≤
380A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Min. Typ. Max. Units
5.9
–––
–––
–––
–––
–––
–––
–––
–––
25
–––
82
–––
38
–––
32
–––
2700
–––
240
–––
21
–––
2950
–––
67
–––
120
Conditions
V
DS
= 50V, I
D
= 10A
I
D
= 17A
V
DS
= 480V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 300V
I
D
= 17A
R
G
= 7.5
V
GS
= 10V,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 480V
–––
99
32
47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
pF
ns
S
D
G
Diode Characteristics
17
68
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