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參數(shù)資料
| 型號： | IRF9510 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET(3.0A, 100V, 1.200 Ω,P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 59K |
| 代理商： | IRF9510 |
5-5
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
-
-
-3.0
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
-12
A
Source to Drain Diode Voltage(Note 2)
V
SD
T
C
= 25
o
C, I
SD
= -3.0A, V
GS
= 0V, (Figure 13)
T
J
= 150
o
C, I
SD
= -3.0A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= -3.0A, dI
SD
/dt = 100A/
μ
s
-
-
-1.5
V
Reverse Recovery Time
t
rr
-
120
-
ns
Reverse Recovered Charge
Q
RR
-
6.0
-
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 31.7mH, R
G
= 25
, peak I
AS
= 3.0A. See Figures 15, 16.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
G
D
S
T
C,
CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
T
C,
CASE TEMPERATURE (
o
C)
50
75
100
25
150
-5
-4
-3
0
-2
I
D
D
-1
125
Z
θ
J
,
1
0.1
0.01
10
-2
10
-5
10
-4
10
-3
0.1
1
10
t
1
, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
0.5
0.01
0.02
0.2
0.1
0.05
T
DUTY FACTOR: D = t
1
/t
2
T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
NOTES:
P
DM
t
1
t
2
IRF9510
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相關(guān)代理商/技術(shù)參數(shù) |
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| IRF9510_R4941 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9510H7 | 制造商:Harris Corporation 功能描述: |
| IRF9510L | 功能描述:MOSFET P-CH 100V 4A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF9510PBF | 功能描述:MOSFET P-Chan 100V 4.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF9510S | 功能描述:MOSFET P-Chan 100V 4.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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