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參數(shù)資料
| 型號： | IRF830 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | TMOS Power FET N-Channel Enhancement Mode(TMOS N-溝道增強型功率場效應(yīng)管) |
| 中文描述： | 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 62K |
| 代理商： | IRF830 |
IRF830
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
V
(BR)DSS
500
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= Rated V
DSS
, V
GS
= 0 Vdc)
(V
DS
= 0.8 Rated V
DSS
, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
—
—
0.2
1.0
mAdc
Gate–Body Leakage Current, Forward
(V
GSF
= 20
Vdc, V
DS
= 0)
I
GSS(f)
—
100
nAdc
Gate–Body Leakage Current, Reverse
(V
GSR
= 20
Vdc, V
DS
= 0)
I
GSS(r)
—
100
nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 0.25 mA)
V
GS(th)
2.0
4.0
Vdc
Static Drain–to–Source On–Resistance
(V
GS
= 10 Vdc, I
D
= 2.5 Adc)
R
DS(on)
—
1.5
Ohm
On–State Drain Current (V
GS
= 10 V)
(V
DS
≥
6.75 Vdc)
I
D(on)
4.5
—
Adc
Forward Transconductance
(V
DS
≥
6.75 Vdc, I
D
= 2.5 Adc)
g
FS
2.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
f 1.0 MHz)
C
iss
—
800
pF
Output Capacitance
C
oss
—
200
Reverse Transfer Capacitance
C
rss
—
60
SWITCHING CHARACTERISTICS
(1)
Turn–On Delay Time
t
d(on)
—
30
ns
Rise Time
(V
= 200 Vdc, I
= 2.5 Apk,
DD
R
G
= 15
)
t
r
—
30
Turn–Off Delay Time
D
t
d(off)
—
55
Fall Time
t
f
—
30
Total Gate Charge
(V
DS
= 0.8 Rated V
DSS
,
= 10 Vdc, I
= Rated I
V
GS
10 Vdc, I
D
Rated I
D
)
0 8 R t d V
Q
g
22 (Typ)
30
nC
Gate–Source Charge
Q
gs
12 (Typ)
—
Gate–Drain Charge
Q
gd
10 (Typ)
—
SOURCE–DRAIN DIODE CHARACTERISTICS
(1)
Forward On–Voltage
(I
S
= Rated I
D
,
= 0)
V
GS
0)
R t d I
V
SD
1.1 (Typ)
1.6
Vdc
Forward Turn–On Time
t
on
Limited by stray inductance
Reverse Recovery Time
t
rr
450 (Typ)
—
ns
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
L
D
3.5 (Typ)
4.5 (Typ)
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
L
S
7.5 (Typ)
—
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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