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參數(shù)資料
| 型號(hào)： | IRF82FI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
| 中文描述： | N通道增強(qiáng)型功率MOSTRANSISTORS |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 168K |
| 代理商： | IRF82FI |
IRF820AS/L
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
°
0.1
1
10
100
10
100
1000
10000
BY R
DS(on)
OPERATION IN THIS AREA LIMITED
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
0
4
8
12
16
0
5
10
15
20
Q , Total Gate Charge (nC)
V
G
I =
SEE FIGURE
FOR TEST CIRCUIT
13
2.5A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
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