參數(shù)資料
型號： IRF8010L
英文描述： 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
中文描述： 100V的單N溝道HEXFET功率MOSFET的采用TO - 262封裝
文件頁數(shù)： 2/10頁
文件大?。?/td> 224K
代理商： IRF8010L
IRF8010S/IRF8010L
2
www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
Drain-to-Source Leakage Current
Min.
100
–––
–––
2.0
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.11
–––
12
15
–––
4.0
–––
20
–––
250
–––
200
–––
-200
V
V/°C
m
V
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
82
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
81
120
22
–––
26
–––
15
–––
130
–––
61
–––
120
–––
3830
–––
480
–––
59
–––
3830
–––
280
–––
530
–––
V
nC
ns
pF
Units
mJ
A
mJ
Min.
–––
Typ. Max. Units
–––
80
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
320
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
99
460
1.3
150
700
V
ns
nC
V
GS
= 20V
V
GS
= -20V
Max.
310
45
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 80V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 80A
R
G
= 39
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
T
J
= 25°C, I
S
= 80A, V
GS
= 0V
T
J
= 150°C, I
F
= 80A, V
DD
= 50V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 45A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
26
Conditions
V
DS
= 25V, I
D
= 45A
I
D
= 80A
V
DS
= 80V
Typ.
–––
–––
–––
相關PDF資料
PDF描述
IRF8010S 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package
IRF820ASTRL TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | TO-263AB
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相關代理商/技術參數(shù)
參數(shù)描述
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