參數(shù)資料
型號： IRF7484Q
廠商： International Rectifier
英文描述： AUTOMOTIVE MOSFET
中文描述： 汽車MOSFET的
文件頁數(shù)： 2/10頁
文件大?。?/td> 259K
代理商： IRF7484Q
IRF7484Q
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.3A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
59
110
1.3
89
170
V
ns
nC
Source-Drain Ratings and Characteristics
110
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
Surface mounted on 1 in square Cu board.
Starting T
J
= 25°C, L = 2.3mH, R
G
= 25
,
I
AS
= 14A. (See Figure 12).
I
SD
≤
14A, di/dt
≤
140A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
Limited by T
Jmax
, see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
Parameter
Min. Typ. Max. Units
40
–––
––– 0.040 –––
–––
–––
1.0
–––
40
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
69
–––
9.0
–––
16
–––
9.3
–––
5.0
–––
180
–––
58
––– 3520 –––
–––
660
–––
76
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 7.0V, I
D
= 14A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 14A
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 8.0V
V
GS
= -8.0V
I
D
= 14A
V
DS
= 32V
V
GS
= 7.0V
V
DD
= 20V
I
D
= 1.0A
R
G
= 6.2
V
GS
= 7.0V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V/°C
m
V
S
10
2.0
–––
20
250
200
-200
100
–––
–––
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
DSS
Drain-to-Source Leakage Current
S
D
G
2.3
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