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參數(shù)資料
| 型號(hào)： | IRF7470 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 40V的，的Rds（on）最大值\u003d 13mohm，身份證\u003d 10A條） |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | IRF7470 |
IRF7470
2
www.irf.com
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 8.0A, V
GS
= 0V
T
J
= 125°C, I
S
= 8.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.0A, V
R
= 20V
di/dt = 100A/μs
T
J
= 125°C, I
F
= 8.0A, V
R
=20V
di/dt = 100A/μs
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
I
SM
–––
–––
–––
–––
–––
–––
–––
–––
0.80
0.65
72
130
76
150
1.3
–––
110
200
110
230
V
t
rr
Q
rr
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
nC
S
D
G
Diode Characteristics
2.3
85
A
V
SD
Diode Forward Voltage
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
g
fs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
Q
oss
Output Gate Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
ns
Symbol
E
AS
I
AR
Parameter
Typ.
–––
–––
Max.
300
8.0
Units
mJ
A
Single Pulse Avalanche Energy
Avalanche Current
Avalanche Characteristics
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.04 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
–––
–––
V
GS(th)
Gate Threshold Voltage
0.8
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Min.
40
Typ.
–––
Max. Units
–––
Conditions
V
GS
= 0V, I
D
= 250μA
V
9.0
10
14.5
–––
–––
–––
–––
–––
13
15
30
2.0
20
100
200
-200
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 8.0A
V
GS
= 2.8V, I
D
= 5.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 32V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125C
V
GS
= 12V
V
GS
= -12V
m
V
μA
nA
Min. Typ. Max. Units
27
–––
–––
29 44 I
D
= 8.0A
–––
7.9
12
–––
8.0
12
–––
23
35
–––
10
–––
–––
1.9
–––
–––
21
–––
–––
3.2
–––
–––
3430 –––
–––
690
–––
–––
41
–––
Conditions
V
DS
= 20V, I
D
= 8.0A
–––
S
nC
V
DS
= 20V
V
GS
= 4.5V
V
GS
= 0V, V
DS
= 16V
V
DD
= 20V
I
D
= 8.0A
R
G
= 1.8
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 20V
= 1.0MHz
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7470 | 制造商:International Rectifier 功能描述:MOSFET N SO-8 |
| IRF7470.PBF | 制造商:International Rectifier 功能描述:MOSFET N SO-8 制造商:International Rectifier 功能描述:MOSFET, N, SO-8 制造商:International Rectifier 功能描述:MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:40V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.5W ;RoHS Compliant: Yes |
| IRF7470HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 40V 10A 8-Pin SOIC |
| IRF7470PBF | 功能描述:MOSFET 40V 1 N-CH HEXFET 13mOhms 29nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7470PBF | 制造商:International Rectifier 功能描述:MOSFET |
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