參數(shù)資料
型號： IRF7413ZUPBF
廠商： International Rectifier
英文描述： HEXFT Power MOSFET
中文描述： HEXFT功率MOSFET
文件頁數(shù)： 2/10頁
文件大小： 273K
代理商： IRF7413ZUPBF
2
www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min.
30
Typ. Max. Units
–––
–––
V
–––
0.025
–––
V/°C
m
–––
8.0
10
–––
10.5
13
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
1.35
1.80
2.25
V
Gate Threshold Voltage Coefficient
–––
-5.0
–––
mV/°C
Drain-to-Source Leakage Current
–––
–––
1.0
μA
–––
–––
150
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
62
–––
–––
S
Q
g
Total Gate Charge
–––
9.5
14
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Avalanche Characteristics
Pre-Vth Gate-to-Source Charge
–––
3.0
–––
Post-Vth Gate-to-Source Charge
–––
1.0
–––
nC
Gate-to-Drain Charge
–––
3.0
–––
Gate Charge Overdrive
–––
2.5
–––
See Fig. 16
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
–––
4.0
–––
–––
–––
5.6
2.3
–––
4.5
nC
Turn-On Delay Time
–––
8.7
–––
Rise Time
–––
6.3
–––
Turn-Off Delay Time
–––
11
–––
ns
Fall Time
–––
3.8
–––
Input Capacitance
–––
1210
–––
Output Capacitance
–––
270
–––
pF
Reverse Transfer Capacitance
–––
140
–––
Parameter
Units
mJ
E
AS
I
AR
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Single Pulse Avalanche Energy
Avalanche Current
A
Min.
–––
Typ. Max. Units
–––
3.1
A
–––
–––
100
–––
–––
1.0
V
–––
24
36
ns
Q
rr
t
on
Reverse Recovery Charge
–––
16
24
nC
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
I
D
= 10A
V
GS
= 0V
V
DS
= 15V
= 1.0MHz
V
GS
= 4.5V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V
Typ.
–––
Clamped Inductive Load
V
DS
= 15V, I
D
= 10A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
T
J
= 25°C, I
F
= 10A, V
DD
= 15V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
DS
= 15V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 10A
V
DS
= 15V
V
DS
= 24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
Conditions
Max.
32
10
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