參數(shù)資料
型號： IRF7324D1TR
廠商： International Rectifier
英文描述： FETKY MOSFET / Schottky Diode
中文描述： FETKY MOSFET的/肖特基二極管
文件頁數(shù)： 2/8頁
文件大?。?/td> 164K
代理商： IRF7324D1TR
IRF7324D1
2
www.irf.com
Parameter
V
(BR)DSS
R
DS(on)
Min. Typ. Max. Units
-20
—
—
0.070 0.180
—
0.115 0.375
-0.70
—
4.0
—
—
—
—
—
—
—
—
—
—
15
—
2.2
—
6.0
—
8.4
—
26
—
51
—
33
—
610
—
310
—
170
Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
—
V
V
GS
= 0V, I
D
= -250μA
V
GS
= -4.5V, I
D
= -2.9A
V
GS
= -2.7V, I
D
= -2.5A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -16V, I
D
= -2.2A
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= -12V
V
GS
= 12V
I
D
= -2.2A
V
DS
= -16V
V
GS
= -4.5V (see figure 10)
V
DD
= -10V
I
D
= -2.2A
R
G
= 6.0
R
D
= 4.5
V
GS
= 0V
V
DS
= -15V
= 1.0MHz (see figure 9)
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
—
—
-1.0
-25
-100
100
22
3.3
9.0
—
—
—
—
—
—
—
V
S
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
μA
nA
ns
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Min. Typ. Max.
—
—
—
—
—
—
—
43
—
44
Units
A
Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
-2.0
-23
-1.2
65
66
V
ns
nC
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.3A
di/dt = 100A/μs
Parameter
Max. Units.
1.7
1.2
120
11
Conditions
I
F(av)
Max. Average Forward Current
50% Duty Cycle. Rectangular Wave, T
A
= 25°C
T
A
= 70°C
Following any rated
I
SM
Max. peak one cycle Non-repetitive
Surge current
5μs sine or 3μs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
A
A
Schottky Diode Maximum Ratings
Parameter
Max. Units
0.50
0.62
0.39
0.57
0.05
10
92
3600 V/ μs Rated V
R
Conditions
V
FM
Max. Forward voltage drop
I
F
= 1.0A, T
J
= 25°C
I
F
= 2.0A, T
J
= 25°C
I
F
= 1.0A, T
J
= 125°C
I
F
= 2.0A, T
J
= 125°C .
V
R
= 20V
mA
I
RM
Max. Reverse Leakage current
T
J
= 25°C
T
J
= 125°C
C
t
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
pF
V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
Schottky Diode Electrical Specifications
V
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