參數(shù)資料
型號(hào)： IRF7306PBF
廠商： International Rectifier
英文描述： HEXFET㈢Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁(yè)數(shù)： 15/20頁(yè)
文件大小： 334K
代理商： IRF7306PBF
TPS77901, TPS77918, TPS77925, TPS77930
250-mA LDO REGULATOR WITH INTEGRATED RESET IN A MSOP8 PACKAGE
SLVS283A – MARCH 2000 – REVISED MARCH 2000
15
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
Figure 22 shows the output capacitor and its parasitic impedances in a typical LDO output stage.
LDO
V
I
V
ESR
I
O
R
ESR
C
O
R
LOAD
V
O
+
–
Figure 22. – LDO Output Stage With Parasitic Resistances ESR and ESL
In steady state (dc state condition), the load current is supplied by the LDO (solid arrow) and the voltage across
the capacitor is the same as the output voltage (V(C
O
) = V
O
). This means no current is flowing into the C
O
branch. If I
O
suddenly increases (transient condition), the following occurs;
The LDO is not able to supply the sudden current need due to its response time (t
1
in Figure 23). Therefore,
capacitor C
O
provides the current for the new load condition (dashed arrow). C
O
now acts like a battery with
an internal resistance, ESR. Depending on the current demand at the output, a voltage drop will occur at R
ESR
.
This voltage is shown as V
ESR
in Figure 22.
When C
O
is conducting current to the load, initial voltage at the load will be V
O
= V(C
O
) – V
ESR
. Due to the
discharge of C
O
, the output voltage V
O
will drop continuously until the response time t
1
of the LDO is reached
and the LDO will resume supplying the load. From this point, the output voltage starts rising again until it reaches
the regulated voltage. This period is shown as t
2
in Figure 23.
The figure also shows the impact of different ESRs on the output voltage. The left brackets show different levels
of ESRs where number 1 displays the lowest and number 3 displays the highest ESR.
From above, the following conclusions can be drawn:
The higher the ESR, the larger the droop at the beginning of load transient.
The smaller the output capacitor, the faster the discharge time and the bigger the voltage droop during the
LDO response period.
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參數(shù)描述
IRF7306QPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7306QPBF_10 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPOWERMOSFET
IRF7306QTRPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7306TR 功能描述:MOSFET 2P-CH 30V 3.6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
IRF7306TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 3.6A 8-Pin SOIC T/R
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