參數(shù)資料
型號(hào): IRF710
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述: 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 56K
代理商: IRF710
4-224
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
20
1.25
1.05
0.85
100
T
J
, JUNCTION TEMPERATURE (
o
C)
1.15
0.95
0.75
140
-40
60
160
120
80
40
0
-60
-20
I
D
= 250
μ
A
N
B
1
2
C
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
500
400
300
200
100
0
5
2
5
10
2
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
10
C
ISS
C
OSS
C
RSS
I
D,
DRAIN CURRENT (A)
0.4
0.8
1.2
1.6
0
2.0
2.0
1.6
1.2
0
0.8
g
f
,
0.4
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1
0
0.4
0.8
1.2
2.0
0.1
2
2
5
5
T
J
= 150
o
C
T
J
= 25
o
C
10
2
5
1.6
10
-2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Q
g,
GATE CHARGE (nC)
3
6
9
12
0
15
20
8
V
G
16
12
0
I
D
= 2.0A
4
V
DS
= 320V
V
DS
= 200V
V
DS
= 80V
IRF710
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