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  • 參數(shù)資料
    型號: IRF6716MTRPbF
    廠商: International Rectifier
    英文描述: DirectFET Power MOSFET
    中文描述: DirectFET功率MOSFET
    文件頁數(shù): 1/9頁
    文件大小: 648K
    代理商: IRF6716MTRPBF
    www.irf.com
    1
    02/20/07
    IRF6716MPbF
    IRF6716MTRPbF
    DirectFET
    Power MOSFET
    Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
    SQ
    SX
    ST
    Fig 1.
    Typical On-Resistance vs. Gate Voltage
    Fig 2.
    Typical Total Gate Charge vs Gate-to-Source Voltage
    RoHs Compliant Containing No Lead and Bromide
    Low Profile (<0.6 mm)
    Dual Sided Cooling Compatible
    Ultra Low Package Inductance
    Optimized for High Frequency Switching
    Ideal for CPU Core DC-DC Converters
    Optimized for Sync. FET socket of Sync. Buck Converter
    Low Conduction and Switching Losses
    Compatible with existing Surface Mount Techniques
    100% Rg tested
    Click on this section to link to the appropriate technical paper.
    Click on this section to link to the DirectFET Website.
    Surface mounted on 1 in. square Cu board, steady state.
    T
    C
    measured with thermocouple mounted to top (Drain) of part.
    Repetitive rating; pulse width limited by max. junction temperature.
    Starting T
    J
    = 25°C, L = 0.65mH, R
    G
    = 25
    , I
    AS
    = 32A.
    DirectFET
    ISOMETRIC
    Description
    The IRF6716MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
    TM
    packaging to achieve
    the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
    with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
    techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
    dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
    The IRF6716MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
    switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
    processors operating at higher frequencies. The IRF6716MPbF has been optimized for parameters that are critical in synchronous buck
    including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6716MPbF offers particularly low Rds(on) and high Cdv/dt
    immunity for synchronous FET applications
    .
    Absolute Maximum Ratings
    Parameter
    V
    DS
    Drain-to-Source Voltage
    V
    GS
    Gate-to-Source Voltage
    I
    D
    @ T
    A
    = 25°C
    Continuous Drain Current, V
    GS
    @ 10V
    I
    D
    @ T
    A
    = 70°C
    Continuous Drain Current, V
    GS
    @ 10V
    I
    D
    @ T
    C
    = 25°C
    Continuous Drain Current, V
    GS
    @ 10V
    I
    DM
    Pulsed Drain Current
    E
    AS
    Single Pulse Avalanche Energy
    I
    AR
    Avalanche Current
    MQ
    MX
    MT
    MP
    0
    10
    20
    30
    40
    50
    60
    QG Total Gate Charge (nC)
    0.0
    1.0
    2.0
    3.0
    4.0
    5.0
    6.0
    VG
    VDS= 20V
    VDS= 13V
    ID= 32A
    Units
    V
    A
    mJ
    A
    32
    Max.
    25
    31
    180
    320
    330
    ±20
    39
    V
    DSS
    25V max
    Q
    g tot
    39nC
    V
    GS
    R
    DS(on)
    1.2m
    @10V
    Q
    gs2
    5.3nC
    R
    DS(on)
    2.0m
    @ 4.5V
    Q
    oss
    V
    gs(th)
    27nC
    ±20V max
    Q
    gd
    12nC
    Q
    rr
    28nC
    1.9V
    2
    3
    4
    5
    6
    7
    8
    9
    10
    VGS, Gate -to -Source Voltage (V)
    0
    1
    2
    3
    4
    5
    6
    T(
    )
    ID = 40A
    TJ = 25°C
    TJ = 125°C
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    IRF6717MPBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFETPower MOSFET
    IRF6717MTR1PBF 功能描述:MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    IRF6717MTRPBF 功能描述:MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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