- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄384490 > IRF6635PBF (International Rectifier) DirectFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF6635PBF |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 252K |
| 代理商： | IRF6635PBF |
www.irf.com
1
5/3/06
DirectFET
Power MOSFET
Description
The IRF6635PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6635PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6635PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
Fig 1.
Typical On-Resistance vs. Gate-to-Source Voltage
Fig 2.
Total Gate Charge vs. Gate-to-Source Voltage
MQ
MX
MT
DirectFET
ISOMETRIC
V
DSS
30V max
Q
g tot
47nC
V
GS
R
DS(on)
1.3m
@ 10V
Q
gs2
4.7nC
R
DS(on)
1.8m
@ 4.5V
Q
oss
V
gs(th)
29nC
±20V max
Q
gd
17nC
Q
rr
48nC
1.8V
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
TS
)
ID = 32A
TJ = 25°C
TJ = 125°C
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VG
VDS= 24V
VDS= 15V
ID= 25A
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
IRF6635PbF
IRF6635TRPbF
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.63mH, R
G
= 25
, I
AS
= 25A.
Units
V
A
mJ
A
Max.
30
25
180
250
200
25
±20
32
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF6635TRPbF | DirectFET Power MOSFET |
| IRF6637 | DirectFETPower MOSFET |
| IRF6637TR1 | DirectFETPower MOSFET |
| IRF6665 | DIGITAL AUDIO MOSFET |
| IRF6668 | DirectFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6635TR1 | 功能描述:MOSFET N-CH 30V 32A DIRECTFET RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF6635TR1PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6635TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6635TRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6636 | 功能描述:MOSFET 20V 1 N-CH HEXFET DIRECTFET (ST) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。