參數(shù)資料
型號(hào)： IRF6619
廠商： International Rectifier
英文描述： DirectFET Power MOSFET
中文描述： DirectFET功率MOSFET
文件頁數(shù)： 6/9頁
文件大?。?/td> 292K
代理商： IRF6619
6
www.irf.com
Fig 15.
Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 17a, 17b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 3)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 19a.
Switching Time Test Circuit
Fig 19b.
Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
Fig 17b.
Unclamped Inductive Waveforms
Fig 17a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 18a.
Gate Charge Test Circuit
Fig 18b.
Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 16.
Maximum Avalanche Energy Vs. Drain Current
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
0
200
400
600
800
1000
EA
ID
TOP
12A
15A
BOTTOM
24A
V
GS
Pulse Width < 1μs
Duty Factor < 0.1%
V
DD
V
DS
L
D
D.U.T
+
-
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
GS
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
100
200
300
EA
Single Pulse
ID = 24A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6619 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes
IRF6619PBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET
IRF6619TR1 功能描述:MOSFET 20V 1 N-CH 1.65mOhm DirectFET 2.0V VGS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6619TR1PBF 功能描述:MOSFET 20V 1 N-CH 1.65mOhm DirectFET 2.0V VGS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6619TR1PBF 制造商:International Rectifier 功能描述:MOSFET
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