參數(shù)資料
型號： IRF6218S
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/9頁
文件大?。?/td> 234K
代理商： IRF6218S
IRF6218S/L
2
www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
Drain-to-Source Leakage Current
Min.
-150
–––
–––
-3.0
–––
–––
–––
–––
Typ. Max. Units
–––
–––
-0.17
–––
120
150
–––
-5.0
–––
-25
–––
-250
–––
-100
–––
100
V
V/°C
m
V
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Min.
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
71
110
21
–––
32
–––
21
–––
70
–––
35
–––
30
–––
2210
–––
370
–––
89
–––
2220
–––
170
–––
340
–––
S
nC
ns
pF
Units
mJ
A
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
–––
Typ. Max. Units
–––
-27
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
-110
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
t
rr
Q
rr
–––
–––
–––
–––
150
860
-1.6
–––
–––
V
ns
nC
Typ.
–––
–––
Conditions
V
DS
= -50V, I
D
= -16A
I
D
= -16A
V
DS
= -120V
V
GS
= -10V
V
DD
= -75V
I
D
= -16A
R
G
= 3.9
Conditions
V
GS
= -10V
V
GS
= 0V
V
DS
= -25V
= 1.0MHz
V
GS
= 0V, V
DS
= -1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= -120V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to -120V
210
-16
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -16A, V
GS
= 0V
T
J
= 25°C, I
F
= -16A, V
DD
= -25V
di/dt = -100A/μs
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -16A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -120V, V
GS
= 0V
V
DS
= -120V, V
GS
= 0V, T
J
= 150°C
V
GS
= -20V
V
GS
= 20V
Max.
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