參數(shù)資料
型號: IRF614
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 2.0A, 250V, 2.0 Ohm,N-Channel Power MOSFET(2.0A, 250V, 2.0 Ω,N溝道增強型功率MOSFET)
中文描述: 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 7/7頁
文件大?。?/td> 45K
代理商: IRF614
7
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
0.3
μ
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
G(REF)
0
(ISOLATED
SUPPLY)
V
DS
0.2
μ
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
RESISTOR
I
G
CURRENT
SAMPLING
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
G(REF)
0
IRF614
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參數(shù)描述
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IRF614B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
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IRF614BFP001 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF614L 功能描述:MOSFET N-CH 250V 2.7A TO-262 RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件