參數(shù)資料
型號(hào): IRF5Y540CM
廠商: International Rectifier
英文描述: POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*)
中文描述: 功率MOSFET N溝道(減振鋼板基本\u003d 100V的,的Rds(on)\u003d 0.058ohm,身份證\u003d 18A條*)
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 99K
代理商: IRF5Y540CM
IRF5Y540CM
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
400
800
1200
1600
2000
2400
2800
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
20
40
60
80
100
120
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
16A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
1
10
100
1000
0.5
1.0
1.5
2.0
2.5
3.0
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 150 C
°
T = 25 C
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
ID
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
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