- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384490 > IRF5NJZ48 (International Rectifier) POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.016ohm, Id=22A*) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF5NJZ48 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.016ohm, Id=22A*) |
| 中文描述： | 功率MOSFET N溝道（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.016ohm，身份證\u003d 22A條*） |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 116K |
| 代理商： | IRF5NJZ48 |
IRF5NJZ48
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
1.67
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
22*
88
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.3
104
210
V
nS
nC
T
j
= 25°C, IS = 22A, VGS = 0V
Tj = 25°C, IF = 22A, di/dt
≤
100A/
μ
s
VDD
≤
30V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
55
—
Typ
—
0.056
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.016
VGS = 10V, ID = 22A
2.0
22
—
—
—
—
—
—
4.0
—
25
250
V
VDS = VGS, ID = 250
μ
A
VDS = 25V, IDS = 22A
VDS = 55V ,VGS=0V
VDS = 44V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 22A
VDS = 44V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
101
19
41
23
141
60
98
—
nC
VDD = 28V, ID = 22A,
RG = 5.1
Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1900
620
270
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
* Current is limited by package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF5Y3315CM | Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes |
| IRF5Y5305CM | POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*) |
| IRF5Y540CM | POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*) |
| IRF5Y6215CM | POWER MOSFET P-CHANNEL(Vdss=-150V, Rds(on)=0.29ohm, Id=-11A) |
| IRF5Y9540CM | POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF5NJZ48SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 22A 3SMD-0.5 - Bulk |
| IRF5NJZ48SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 22A 3SMD-0.5 - Bulk |
| IRF5S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| IRF5Y1310CM | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 18A 3-Pin(3+Tab) TO-257AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 18A 3PIN TO-257 - Bulk |
| IRF5Y1310CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 18A 3PIN TO-257 - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。