- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄360929 > IRF5NJZ34 55V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF5NJZ34 |
| 英文描述： | 55V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package |
| 中文描述： | 55V的單個(gè)N -溝道高可靠性的貼片MOSFET的- 0.5軟件包 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 112K |
| 代理商： | IRF5NJZ34 |
IRF5NJZ34
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
3.13
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
22*
88
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.6
86
200
V
nS
nC
T
j
= 25°C, IS = 22A, VGS = 0V
Tj = 25°C, IF = 22A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
55
—
Typ
—
0.054
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 250
μ
A
BVDSS
V
V/°C
—
—
0.04
VGS = 10V, ID = 16A
2.0
8.0
—
—
—
—
—
—
4.0
—
25
250
V
VDS = VGS, ID = 250
μ
A
VDS = 10V, IDS = 16A
VDS = 55V ,VGS=0V
VDS = 44V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 22A
VDS = 44V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
34
7.0
14
12
28
30
30
—
nC
VDD = 28V, ID = 22A,
VGS =10V, RG = 13
Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
695
252
100
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
* Current is limited by package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF610A | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-220AB |
| IRF614A | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.8A I(D) | TO-220AB |
| IRF614S | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.7A I(D) | TO-252VAR |
| IRF615 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | TO-220AB |
| IRF620N | Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF5NJZ34SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 22A 3SMD-1 - Bulk |
| IRF5NJZ34SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 22A 3SMD-0.5 - Bulk |
| IRF5NJZ48 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 22A 3SMD-0.5 - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 55V, 22A, SMD-0.5, Transistor Polarity:N Channel, Continuous D |
| IRF5NJZ48SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 22A 3SMD-0.5 - Bulk |
| IRF5NJZ48SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 22A 3SMD-0.5 - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。