參數(shù)資料
型號(hào)： IRF5851
廠商： International Rectifier
英文描述： Power MOSFET(Vdss = +-20 V)
中文描述： 功率MOSFET（減振鋼板基本\u003d -20五）
文件頁(yè)數(shù)： 2/14頁(yè)
文件大?。?/td> 172K
代理商： IRF5851
IRF5851
2
www.irf.com
Parameter
Min. Typ. Max. Units
20
—
P-Ch -20
—
N-Ch
—
0.016
P-Ch
—
-0.011
—
—
—
0.090
—
—
0.120
—
—
0.135
—
—
0.220
N-Ch 0.60
—
P-Ch -0.45
—
N-Ch 5.2
—
P-Ch 3.5
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-P
––
—
N-Ch
—
4.0
P-Ch
—
3.6
N-Ch
—
0.95
P-Ch
—
0.66
N-Ch
—
0.83
P-Ch
—
5.7
N-Ch
—
6.6
P-Ch
—
8.3
N-Ch
—
1.2
P-Ch
—
14
N-Ch
—
15
P-Ch
—
31
N-Ch
—
2.4
P-Ch
—
28
N-Ch
—
400
P-Ch
—
320
N-Ch
—
48
P-Ch
—
56
N-Ch
—
32
P-Ch
—
40
Conditions
N-Ch
—
—
—
V
GS
= 0V, I
D
= 250μA
V
= 0V, I
= -250μA
Reference to 25
°
C, I
D
= 1mA
Reference to 25
°
C, I
D
= -1mA
V
GS
= 4.5V, I
D
= 2.7A
V
GS
= 2.5V, I
D
= 2.2A
V
GS
= -4.5V, I
D
= -2.2A
V
GS
= -2.5V, I
D
= -1.7A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
, I
D
= -250μA
V
DS
= 10V, I
D
= 2.7A
V
DS
= -10V, I
D
= -2.2A
V
DS
= 16 V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V
V
DS
= 16 V, V
GS
= 0V, T
J
= 70
°
C
V
DS
= -16V, V
GS
= 0V, T
J
= 70
°
C
V
GS
= ± 12V
1.25
-1.2
—
—
1.0
-1.0
25
-25
±100
6.0
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
GSS
Gate-to-Source Forward Leakage
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
N-Channel
I
D
= 2.7A, V
DS
= 10V, V
GS
= 4.5V
P-Channel
I
D
= -2.2A, V
DS
= -10V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 1.0A, R
G
= 6.2
,
V
GS
= 4.5V
P-Channel
V
DD
= -10V, I
D
= -1.0A, R
G
= 6.0
V
GS
= -4.5V
N-Channel
V
GS
= 0V, V
DS
= 15V,
= 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V,
= 1.0MHz
N-Ch
P-Ch
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 & 26 )
Pulse width
≤
400μs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
Notes:
Parameter
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
25
—
23
—
6.5
—
7.7
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.96
-0.96
11
-9.0
1.2
-1.2
38
35
9.8
12
T
J
= 25
°
C, I
S
= 0.96A, V
GS
= 0V
T
J
= 25
°
C, I
S
= -0.96A, V
GS
= 0V
N-Channel
T
= 25
°
C, I
F
= 0.96A, di/dt = 100A/μs
P-Channel
T
J
= 25
°
C, I
F
= -0.96A, di/dt = -100A/μs
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF5851PBF 制造商:International Rectifier 功能描述:MOSFET Dual N/P-Ch 20V 2.7A/2.2A TSOP6
IRF5851TR 功能描述:MOSFET N+P 20V 2.7A 6-TSOP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
IRF5851TRPBF 功能描述:MOSFET MOSFT DUAL N/PCh 20V 2.7A Micro 6 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF5851TRPBF 制造商:International Rectifier 功能描述:Transistor Polarity:Dual N/P Channel
IRF5852 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=20V)
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