參數(shù)資料
型號: IRF3805S-7P
廠商: International Rectifier
英文描述: AUTOMOTIVE MOSFET
中文描述: 汽車MOSFET的
文件頁數(shù): 7/10頁
文件大?。?/td> 648K
代理商: IRF3805S-7P
www.irf.com
7
Fig 15.
Typical Avalanche Current vs.Pulsewidth
Fig 16.
Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
10000
A
0.05
0.10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25°C due to
avalanche losses
tav
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
EA
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 140A
相關(guān)PDF資料
PDF描述
IRF3808PBF HEXFET Power MOSFET
IRF3808 Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
IRF4000 IEEE 802.3af Compliant PoE Switch in Power Sourcing Equipment
IRF4104LPBF HEXFET㈢ Power MOSFET
IRF4104PBF HEXFET㈢ Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF3805S-7PHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 240A 7-Pin(6+Tab) D2PAK
IRF3805S-7PPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 2.6mOhms 49nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF3805SPBF 功能描述:MOSFET 30V 1 N-CH 3.3mOhm HEXFET 75A ID RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF3805STRL 制造商:International Rectifier 功能描述:MOSFET, 55V, 220A, 3.3 mOhm, 190 nC Qg, D2-Pak
IRF3805STRL-7PP 功能描述:MOSFET MOSFT 55V 240A 2.6mOhm 130nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube