- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360928 > IRF3711STRR TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號： | IRF3711STRR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直|已廢除一（d）|對263AB |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 161K |
| 代理商： | IRF3711STRR |
IRL3705NS/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 46A, V
GS
= 0V
T
J
= 25°C, I
F
= 46A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
94
290
1.3
140
440
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
S
D
G
A
89
310
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Uses IRL3705N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
≤
46A, di/dt
≤
250A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
V
DD
= 25V, starting T
J
= 25°C, L = 320μH
R
G
= 25
, I
AS
= 46A. (See Figure 12)
Parameter
Min. Typ. Max. Units
55
–––
–––
0.056 –––
–––
––– 0.010
–––
––– 0.012
–––
––– 0.018
1.0
–––
50
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
140
–––
37
–––
78
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 46A
V
GS
= 5.0V, I
D
= 46A
V
GS
= 4.0V, I
D
= 39A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 46A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 46A
V
DS
= 44V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 46A
R
G
= 1.8
,
V
GS
= 5.0V
R
D
= 0.59
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
–––
25
250
100
-100
98
19
49
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3600 –––
870
320
–––
–––
pF
nH
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance
7.5
ns
I
DSS
Drain-to-Source Leakage Current
A
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF3808S | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-263AB |
| IRF3808STRL | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-262 |
| IRF3808STRR | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 106A I(D) | TO-263AB |
| IRF3808L | Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) |
| IRF4435 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF3711STRRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 110A 3PIN D2PAK - Tape and Reel |
| IRF3711STRRPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 6mOhms 29nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF3711Z | 功能描述:MOSFET N-CH 20V 92A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF3711ZCL | 功能描述:MOSFET N-CH 20V 92A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF3711ZCLPBF | 功能描述:MOSFET N-CH 20V 92A TO-262 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。