參數(shù)資料
型號(hào): IRF360
廠商: International Rectifier
英文描述: 908140218
中文描述: 三極管N -通道(減振鋼板基本\u003d為400V,的Rds(on)\u003d 0.20ohm,身份證\u003d 25A條)
文件頁數(shù): 2/7頁
文件大?。?/td> 139K
代理商: IRF360
IRF360
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJA
Junction to Case
Junction to Ambient
— 30
0.42
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
25
100
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.8
1000
16
V
nS
μC
T
j
= 25°C, IS = 25A, VGS = 0V
Tj = 25°C, IF = 25A, di/dt
100A/
μ
s
VDD
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
400
Typ
0.46
Max Units
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—— 0.20 VGS = 10V, ID = 16A
— 0.23
VGS = 10V, ID =25A
2.0
— 4.0 V VDS = VGS, ID =250μA
14
S (
)
25
250
μ
A
VGS(th)
gfs
IDSS
VDS > 15V, IDS = 16A
VDS=320V, VGS=0V
VDS =320V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID =25A
VDS = 200V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
96
11
53
6.1
100
-100
210
28
120
33
140
120
99
nC
VDD =200V, ID =25A,
RG =2.35
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4200
900
400
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
n s
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
相關(guān)PDF資料
PDF描述
IRF3703 Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
IRF3704ZCLPBF HEXFET Power MOSFET
IRF3704ZCSPBF HEXFET Power MOSFET
IRF3709ZLPBF HEXFET Power MOSFET
IRF3709ZPBF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF3610SPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF3610STRLPBF 功能描述:MOSFET N-CH 100V 103A D2PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF362 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF36ER100K 制造商:Vishay Dale 功能描述:IND CHOKE 10UH 10% 2.52MHZ 70 FERRITE 500MA AXL - Tape and Reel
IRF36ER101K 制造商:Vishay Dale 功能描述:IND CHOKE 100UH 10% 2.52MHZ 30 FERRITE 275MA AXL - Tape and Reel