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參數(shù)資料
| 型號： | IRF246 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 14 A, 275 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 70K |
| 代理商： | IRF246 |
5-1
Semiconductor
Features
14A and 13A, 275V and 250V
r
DS(ON)
= 0.28
and 0.34
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
275V, 250V DC Rated - 120V AC Line System
Operation
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17423.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF244
TO-204AA
IRF244
IRF245
TO-204AA
IRF245
IRF246
TO-204AA
IRF246
IRF247
TO-204AA
IRF247
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
January 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
2209.2
IRF244, IRF245,
IRF246, IRF247
14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF247 | 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| IRF245 | 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| IRF540, | 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
| IRF640 | 18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
| IRF710 | 2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF247 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| IRF24D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| IRF24ER100K | 制造商:Vishay Dale 功能描述:IND CHOKE 10UH 10% 7.96MHZ 40 FERRITE 370MA AXL - Tape and Reel |
| IRF24ER101K | 制造商:Vishay Dale 功能描述:IND CHOKE 100UH 10% 2.52MHZ 50 FERRITE 165MA AXL - Tape and Reel |
| IRF24ER102K | 制造商:Vishay Dale 功能描述:IND CHOKE 1K UH 10% 796KHZ 50 FERRITE 60MA AXL - Tape and Reel |
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