參數(shù)資料
型號(hào): IRF2204S
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 40V的五(巴西)直| 170A條(?。﹟對(duì)263AB
文件頁(yè)數(shù): 4/11頁(yè)
文件大?。?/td> 224K
代理商: IRF2204S
IRF2204S/IRF2204L
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
30
60
90
120
150
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
V
G
I
=
D
130A
V
= 20V
DS
V
= 32V
DS
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 175 C
T = 25 C
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
100000
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
ID
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
相關(guān)PDF資料
PDF描述
IRF2204STRL TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB
IRF2204STRR TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB
IRF230R TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-204AA
IRF232R TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA
IRF240R TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-204AE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF2204SPBF 功能描述:MOSFET MOSFT 40V 170A 3.6mOhm 130nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF2204STRL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB
IRF2204STRR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB
IRF221 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF222 制造商:International Rectifier 功能描述:MOSFET Transistor, N-Channel, TO-3