參數(shù)資料
型號： IRF1607
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 75V的，的Rds（on）\u003d 0.0075ohm，身份證\u003d 142A）
文件頁數(shù)： 2/9頁
文件大小： 234K
代理商： IRF1607
IRF1607
2
www.irf.com
Parameter
Min. Typ. Max. Units
75
–––
–––
0.086 –––
––– 0.00580.0075
2.0
–––
79
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
210
–––
45
–––
73
–––
22
–––
130
–––
84
–––
86
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 85A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 85A
V
DS
= 75V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 85A
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 85A
R
G
= 1.8
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 60V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
4.0
–––
20
250
200
-200
320
68
110
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
7750
1230
310
5770
790
1420
–––
–––
–––
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 85A, V
GS
= 0V
T
J
= 25°C, I
F
= 85A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
Notes:
–––
–––
–––
–––
130
690 1040
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
1.3
200
V
ns
nC
142
570
A
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.21mH
R
G
= 25
, I
AS
= 85A, V
GS
=10V (See Figure 12).
I
SD
≤
85A, di/dt
≤
310A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
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