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參數(shù)資料
| 型號(hào)： | IRF1205 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 43K |
| 代理商： | IRF1205 |
IRF1205
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 0.027
I
D
= 41A
Description
Fifth Generation MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET
power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175 °C Operating Temprature
l
Fast Switching
l
Fully Avalanche Rated
The TO-220 package is universely preferred for all
commercial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
Absolute Maximum Ratings
11/3/99
Parameter
Max.
41
29
164
83
0.56
± 20
190
25
8.3
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Parameter
Typ.
–––
0.50
–––
Max.
1.8
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
PROVISIONAL
10 lbfin (1.1Nm)
S
D
G
TO-220AB
PD -
93803
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參數(shù)描述 |
|---|---|
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