參數(shù)資料
型號(hào)： IRF1010ELPbF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 229K
代理商： IRF1010ELPBF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
73
220
1.3
110
330
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
84
330
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
Parameter
Min. Typ. Max. Units
60
–––
–––
0.064 –––
–––
–––
2.0
–––
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
78
–––
48
–––
53
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 50A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 50A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 50A
R
G
= 3.6
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
I
AS
= 50A, L = 260μH
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
m
V
S
12
4.0
–––
25
250
100
-100
130
28
44
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
E
AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
––– 1180
3210
690
140
–––
–––
–––
320
pF
mJ
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 260μH
R
G
= 25
, I
AS
= 50A, V
GS
=10V
(See Figure 12)
I
SD
≤
50A di/d
≤
230A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
相關(guān)PDF資料
PDF描述
IRF1010ESPBF HEXFET Power MOSFET
IRF1010NPBF HEXFET Power MOSFET
IRF1302 Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
IRF1312LPbF HEXFET Power MOSFET
IRF1312PBF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF1010EPBF 功能描述:MOSFET MOSFT 60V 81A 12mOhm 86.6nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF1010ES 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
IRF1010ESL 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:
IRF1010ESPBF 制造商:International Rectifier 功能描述:MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 84A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 84A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 60V 84A D2-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 60V, 84A, D2-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation ;RoHS Compliant: Yes 制造商:International Rectifier 功能描述:MOSFET N-Channel 60V 84A D2PAK
IRF1010ESTRL 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 60V, 84A, D2-PAK, Transistor Polarity:N Channel, Continuous Dr
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*