參數(shù)資料
型號： IRCZ34
廠商： International Rectifier
英文描述： CAC 10C 10#16 SKT RECP BOX
中文描述： 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 0.050ohm，身份證\u003d 30A條）
文件頁數(shù)： 2/6頁
文件大?。?/td> 130K
代理商： IRCZ34
C-8
IRCZ34
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
120
0.70
1.6
230
1.4
V
ns
nC
Source-Drain Ratings and Characteristics
–––
–––
120
–––
–––
30
A
S
D
G
Parameter
Min. Typ. Max. Units
60
–––
––– 0.065 –––
–––
––– 0.050
2.0
–––
9.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
–––
100
–––
29
–––
52
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 18A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 18A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 30A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 30A
R
G
= 12
R
D
= 1.0
,
See Fig. 10
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
46
11
22
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
L
D
Internal Drain Inductance
–––
4.5
–––
L
C
Internal Source Inductance
–––
7.5
–––
C
iss
C
oss
C
rss
r
C
oss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Current Sensing Ratio
Output Capacitance of Sensing Cells
––– 1300 –––
–––
640
–––
96
1340 ––– 1480
–––
9.0
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
I
D
= 30A, V
GS
= 10V
V
GS
= 0V, V
DS
= 25V, = 1.0MHz
–––
–––
pF
–––
pF
–––
nH
Between lead,
6 mm (0.25 in.)
from package
and center of
die contact
Drain-to-Source Leakage Current
I
DSS
I
GSS
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 0.019mH
R
G
= 25
, I
AS
= 30A. (See Figure 12)
I
SD
≤
30A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
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