參數(shù)資料
型號: IRAUDAMP3
廠商: International Rectifier
英文描述: 120W x 6 Channel Class D Audio Power Amplifier using IRS20124S and IRF6645
中文描述: 120瓦× 6通道D類音頻功率放大器使用IRS20124S和IRF6645
文件頁數(shù): 13/40頁
文件大小: 3335K
代理商: IRAUDAMP3
www.irf.com
12
Over-Voltage Protection (OVP)
Over-voltage protection will shutdown the amplifier if the bus voltage between GND and
+B exceeds 40V. The threshold is determined by the sum of the Zener diode voltage of
Z11 and the V
BE
of Q11. As a result, it protects the board from bus-pumping at very low
audio signal frequencies by shutting down the amplifier. OVP will automatically reset
after three seconds. The isolated relay is also activated during this fault condition.
Since the +B and –B supplies are normally symmetrical, (bus pumping, although
asymmetrical in time, will pump the bus symmetrically in voltage level.) it is considered
sufficient to only sense one of the two supply voltages for OVP.
Over-Current Protection (OCP)
The internal over-current protection shuts down the IRS20124S if a trip threshold-level of
the bi-directional current-sensing circuit is exceeded. When this fault occurs, the OC-pin
is pulled low for at least 100ns. To keep the IRS20124S from re-starting, the OC-pin
output is fed back to the DT/SD pin, using the three second latch.
Bi-directional Over-Current Sensing
The bi-directional current sensing block has an internal 2.21V level shifter feeding the
signal to a comparator. The OCSET1 pin sets the positive current threshold, and is given
a trip level at VSOC+, which is OCSET1 - 2.21V. In the same way, the OCSET2 pin,
VSOC- is set at OCSET2 – 2.21V.
OC
SET1
OC
SET2
Vs
LO
OC
+
-
+
-
OR
AND
Simplified functional block diagram of bi-directional current sensing
How to Set OC-Threshold
The external resistors R3, R4, and R5 are used as voltage dividers to set OCSET1 and
OCSET2. The trip threshold voltages, VSOC+ and VSOC-, are determined by the
required trip current levels, ITRIP+ and ITRIP-, and the device on-resistance,
R
DS(on)
, in
the low-side MOSFET. Please note that since the on-resistance of the low-side
MOSFET is temperature dependent, the actual over-current trip level will decrease as
the MOSFET heats up.
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