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參數(shù)資料
| 型號： | IR53HD420-P2 |
| 廠商： | International Rectifier |
| 英文描述： | SELF-OSCILLATING HALF BRIDGE |
| 中文描述： | 自激式半橋 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 82K |
| 代理商： | IR53HD420-P2 |
4
IR53H(D)420(-P2)
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used
within the recommended conditions.
NOTE 2:
Care should be taken to avoid switching conditions where the V
S
node flies inductively below ground by more than 5V.
NOTE 3:
Enough current should be supplied to the V
CC
lead of the IC to keep the internal 15.6V zener diode clamping the
voltage at this lead.
Symbol Definition
Minimum
Maximum
Units
V
B
V
IN
V
O
I
D
High side floating supply absolute voltage
High voltage supply
Half-bridge output voltage
Continuous drain current (TA = 25°C)
Vo + 10
—
-3.0 (note 3)
—
—
—
—
—
(note 3)
-40
Vo + Vclamp
500
500
0.7
0.85
0.5
0.6
1.2
5
125
-P2
(TA = 85°C)
-P2
-P2
(TC = 25°C)
Supply current
Ambient temperature
I
CC
T
A
mA
°C
V
A
Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
T
= 1 nF and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are
referenced to COM.
MOSFET Characteristics
Symbol Definition
trr
Qrr
R
ds(on)
V
SD
Dynamic Characteristics
Min. Typ. Max. Units T
est
C
onditions
—
240
—
0.5
—
3.0
—
0.8
Reverse recovery time (MOSFET body diode)
Reverse recovery charge (MOSFET body diode)
Static drain-to-source on resistance
Diode forward voltage
—
—
—
—
V
Symbol Definition
D
tsd
Min. Typ. Max. Units T
est
C
onditions
—
50
—
660
RT duty cycle
Shutdown propagation delay
—
—
% fosc = 20 kHz
nsec
μ
C
di/dt =
100
A/
μ
s
I
F
=700mA
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