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1
Features
Output power FredFets in half-bridge configuration
High side gate drive designed for bootstrap operation
Bootstrap diode integrated into package.
Lower power level-shifting circuit
Lower di/dt gate drive for better noise immunity
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Isolation 1500 V
RMS
min
IR3101
Series
1.6A, 500V
Half-Bridge FredFet
and Integrated Driver
Description
IR3101 is a gate driver IC integrated half bridge FredFET designed for sub 250W (heat-sink-less) motor drive
applications. The sleek and compact single-in-line package is optimized for electronic motor control in
appliance applications such as fans and compressors for refrigerators. The IR3101 offers an extremely
compact, high performance half-bridge inverter, in a single isolated package for a very simple design for two-
phase and three-phase motor drivers.
Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET
power FredFET
technology (HEXFET
with ultra-fast recovery body diode characteristics), enable efficient and rugged
single package construction. Propagation delays for the high and low side power FredFETs are matched
thanks to the advance IC technology.
PD-95807 RevB
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation are measured under
board mounted and still air conditions.
Note 1: under normal operational conditions: both power devices working, no heatsink
Note 2: see figure 4, f
PWM
=20kHz
Parameters
V
DD
V
B
P
D
Rth
JC
Rth
JA
V
ISO
T
J
T
S
T
L
I
O
Max. Values
500
V
o
+ 25
5.8
12
85
1500
-40 to +150
-40 to +150
300
1.6
1.3
2
Units
V
V
W
°C/W
°C/W
V
RMS
°C
°C
°C
A
A
A
(T
C
= 100°C)
(T
C
= 25°C)
I
O
Continuous output current (V
IN
=5V, V
CC
=15V)
Description
High voltage supply
High side floating supply
Package power dissipation @ T
C
≤
80
o
C (per die)
Thermal resistance, junction to case
Thermal resistance, junction to ambient (note 1)
Isolation Voltage (1 min)
Junction temperature (Power Mosfet)
Storage temperature
Lead temperature (soldering, 10 seconds)
Maximum current rating (note 2)