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參數資料
| 型號： | IR2127S |
| 英文描述： | Single High Side Driver. Noninverting Inputs. Current Sensing. Overcurent Detection and Shutdown Fault Output in a 8-lead SOIC package |
| 中文描述： | 單高側驅動器。同相輸入。電流檢測。 Overcurent檢測和關機故障輸出的8引腳SOIC封裝 |
| 文件頁數： | 3/16頁 |
| 文件大?。?/td> | 173K |
| 代理商： | IR2127S |
www.irf.com
3
IR2125
(S)
Symbol
V
IH
V
IL
V
CSTH+
V
CSTH-
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
I
CS+
I
CS-
V
BSUV+
Definition
Figure Min.
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Typ. Max. Units Test Conditions
—
—
—
0.8
230
320
200
260
—
100
—
100
—
50
400
1000
700
1200
4.5
10
μ
A
—
1.0
4.5
10
—
1.0
9.2
10.0
Logic “1” Input Voltage
Logic “0” Input Voltage
CS Input Positive Going Threshold
CS Input Negative Going Threshold
High Level Output Voltage, V
BIAS
- V
O
Low Level Output Voltage, V
O
Offset Supply Leakage Current
Quiescent V
BS
Supply Current
Quiescent V
CC
Supply Current
Logic “1” Input Bias Current
Logic “0” Input Bias Current
“High” CS Bias Current
“Low” CS Bias Current
V
BS
Supply Undervoltage Positive Going
Threshold
V
BS
Supply Undervoltage Negative Going
Threshold
V
CC
Supply Undervoltage Positive Going
Threshold
V
CC
Supply Undervoltage Negative Going
Threshold
ERR Timing Charge Current
2.2
—
150
130
—
—
—
—
—
—
—
—
—
8.5
I
O
= 0A
I
O
= 0A
V
B
= V
S
= 500V
V
IN
= V
CS
= 0V or 5V
V
IN
= V
CS
= 0V or 5V
V
IN
V
IN
= 0V
V
CS
= 3V
V
CS
= 0V
V
BSUV-
28
7.7
8.3
9.0
V
CCUV+
29
8.3
8.9
9.6
V
CCUV-
30
7.3
8.0
8.7
I
ERR
31
65
100
130
V
IN
= 5V, V
CS
= 3V
ERR < V
ERR+
V
IN
= 5V, V
CS
= 3V
ERR > V
ERR+
V
IN
= 0V
V
O
= 0V, V
IN
= 5V
PW
≤
10
μ
s
V
O
= 15V, V
IN
= 0V
PW
≤
10
μ
s
I
ERR+
ERR Pull-Up Current
32
8.0
15
—
I
ERR-
I
O+
ERR Pull-Down Current
Output High Short Circuit Pulsed Current
33
34
16
1.0
30
1.6
—
—
I
O-
Output Low Short Circuit Pulsed Current
35
2.0
3.3
—
V
mV
mA
V
μ
A
A
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25
°
C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to V
S
.
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 3300 pF and T
A
= 25
°
C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figures 3 through 6.
Symbol
t
on
Definition
Figure Min.
7
Typ. Max. Units Test Conditions
150
200
Turn-On Propagation Delay
—
V
IN
= 0 & 5V
V
S
= 0 to 600V
t
off
t
sd
t
r
t
f
t
cs
t
err
Turn-Off Propagation Delay
ERR Shutdown Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
CS Shutdown Propagation Delay
CS to ERR Pull-Up Propagation Delay
8
9
10
11
12
13
—
—
—
—
—
—
150
1.7
43
26
0.7
9.0
190
2.2
60
35
1.2
12
μ
s
C
ERR
= 270 pF
ns
μ
s
ns
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