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參數(shù)資料
| 型號： | IR211 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | SLOTTED SWITCH 5mm GAP 9mm LEAD SPACING |
| 中文描述： | 開槽開關(guān)5毫米間隙9毫米引線間隔 |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 275K |
| 代理商： | IR211 |
2
IR2110/IR2113
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.
www.irf.com
Symbol
V
B
Definition
Min.
-0.3
Max.
525
Units
High side floating supply voltage (IR2110)
(IR2113)
-0.3
625
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dV
s
/dt
P
D
High side floating supply offset voltage
V
B
- 25
V
S
- 0.3
-0.3
V
B
+ 0.3
V
B
+ 0.3
25
High side floating output voltage
Low side fixed supply voltage
Low side output voltage
-0.3
V
CC
+ 0.3
V
SS
+ 25
V
CC
+ 0.3
V
DD
+ 0.3
50
Logic supply voltage
-0.3
Logic supply offset voltage
V
CC
- 25
V
SS
- 0.3
—
Logic input voltage (HIN, LIN & SD)
Allowable offset supply voltage transient (figure 2)
Package power dissipation @ T
A
≤
+25°C
V/ns
(14 lead DIP)
—
1.6
(14 lead DIP w/o lead 4)
—
1.5
(16 lead DIP w/o leads 4 & 5)
—
1.6
(16 lead SOIC)
—
1.25
R
THJA
Thermal resistance, junction to ambient
(14 lead DIP)
—
75
(14 lead DIP w/o lead 4)
—
85
(16 lead DIP w/o leads 4 & 5)
—
75
(16lLead SOIC)
—
100
T
J
T
S
T
L
Junction temperature
—
150
Storage temperature
-55
150
°C
Lead temperature (soldering, 10 seconds)
—
300
Symbol
V
B
V
S
Definition
Min.
V
S
+ 10
Note 1
Max.
V
S
+ 20
500
Units
High side floating supply absolute voltage
High side floating supply offset voltage (IR2110)
(IR2113)
Note 1
600
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
T
A
High side floating output voltage
V
S
10
V
B
20
Low side fixed supply voltage
Low side output voltage
0
V
CC
Logic supply voltage
V
SS
+ 4.5
-5
V
SS
+ 20
5
Logic supply offset voltage
Logic input voltage (HIN, LIN & SD)
V
SS
-40
V
DD
125
Ambient temperature
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical
ratings at other bias conditions are shown in figures 36 and 37.
Note 1: Logic operational for V
S
of -4 to +500V. Logic state held for V
S
of -4V to -V
BS
.
°C/W
W
V
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IR2110 | 功能描述:IC DRIVER HIGH/LOW SIDE 14-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| IR2110_1 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HIGH VOLTAGE MOS GATE DRIVER |
| IR21101 | 制造商:IR 功能描述:* |
| IR2110-1 | 功能描述:IC DRIVER HIGH/LOW SIDE 14-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| IR2110-1PBF | 功能描述:功率驅(qū)動器IC HI LO SIDE DRVR 500V 2A 10ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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