- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360915 > IR2110-2 MOSFET Driver PDF資料下載
參數(shù)資料
| 型號： | IR2110-2 |
| 英文描述： | MOSFET Driver |
| 中文描述： | MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 275K |
| 代理商： | IR2110-2 |
3
IR2110/IR2113
www.irf.com
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
QDD
I
IN+
I
IN-
V
BSUV+
Definition
Figure Min.
12
Typ. Max. Units Test Conditions
—
—
Logic “1” input voltage
9.5
Logic “0” input voltage
13
—
—
6.0
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
14
—
—
1.2
I
O
= 0A
I
O
= 0A
15
—
—
0.1
16
—
—
50
V
B
=V
S
= 500V/600V
V
IN
= 0V or V
DD
V
IN
= 0V or V
DD
V
IN
= 0V or V
DD
V
IN
= V
DD
V
IN
= 0V
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Quiescent V
DD
supply current
Logic “1” input bias current
17
—
125
230
18
—
180
340
19
—
15
30
20
—
20
40
Logic “0” input bias current
V
BS
supply undervoltage positive going
threshold
V
BS
supply undervoltage negative going
threshold
V
CC
supply undervoltage positive going
threshold
V
CC
supply undervoltage negative going
threshold
Output high short circuit pulsed current
21
22
—
7.5
—
8.6
1.0
9.7
V
BSUV-
23
7.0
8.2
9.4
V
CCUV+
24
7.4
8.5
9.6
V
CCUV-
25
7.0
8.2
9.4
I
O+
26
2.0
2.5
—
V
O
= 0V, V
IN
= V
DD
PW
≤
10 μs
V
O
= 15V, V
IN
= 0V
PW
≤
10 μs
I
O-
Output low short circuit pulsed current
27
2.0
2.5
—
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, T
A
= 25°C and V
SS
= COM
unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters
are referenced to V
SS
and are applicable to all three logic input leads: HIN, LIN and SD. The V
O
and I
O
parameters are
referenced to COM and are applicable to the respective output leads: HO or LO.
V
μA
V
A
Symbol
t
on
t
off
t
sd
t
r
t
f
MT
Definition
Figure Min.
7
Typ. Max. Units Test Conditions
120
150
Turn-on propagation delay
—
V
S
= 0V
Turn-off propagation delay
8
—
94
125
V
S
= 500V/600V
V
S
= 500V/600V
Shutdown propagation delay
9
—
110
140
Turn-on rise time
10
—
25
35
Turn-off fall time
11
—
17
25
Delay matching, HS & LS turn-on/off
—
—
—
10
Figure 5
ns
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
, V
DD
) = 15V, C
L
= 1000 pF, T
A
= 25°C and V
SS
= COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Figure 3.
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IR2110C | MOSFET Driver |
| IR2112-1 | MOSFET Driver |
| IR2112-2 | High and Low Side Driver. Shutdown Input. High Creepage Package in a 16-pin DIP -2 leads package |
| IR2113-1 | MOSFET Driver |
| IR2113-2 | MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IR2110-2PBF | 功能描述:功率驅(qū)動器IC HI LO SIDE DRVR 500V 2A 10ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IR2110C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET Driver |
| IR2110E4 | 制造商:International Rectifier 功能描述:MOSFET DRVR 400V 2A 2-OUT HI/LO SIDE NON-INV 18LLCC - Bulk 制造商:International Rectifier 功能描述:400V, 2A 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH/LOW SIDE, LCC-18, Device Type:High Side / Low Side, Modu 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH/LOW SIDE, LCC-18, Device Type:High Side / Low Side, Module Configuration:High Side, Low Side, Peak Output Current:2A, Supply Voltage Min:10V, Supply Voltage Max:20V, Driver Case Style:LCC, No. of Pins:18 , RoHS Compliant: No |
| IR2110E4SCB | 制造商:International Rectifier 功能描述:MOSFET DRVR 400V 2A 2-OUT Hi/Lo Side Non-Inv 18-Pin LLCC 制造商:International Rectifier 功能描述:CONTROL IC, HI-REL, QIRL - Bulk |
| IR2110E4SCS | 制造商:International Rectifier 功能描述:CONTROL IC, HI-REL, QIRL - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。