參數(shù)資料
型號: IPS511E
英文描述: PERIPHERAL DRIVER|1 DRIVER|MOS|LLCC|18PIN|CERAMIC
中文描述: 外圍設(shè)備驅(qū)動程序| 1驅(qū)動器|馬鞍山| LLCC | 18PIN |陶瓷
文件頁數(shù): 2/10頁
文件大?。?/td> 177K
代理商: IPS511E
IPS511E
2
www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter
Rth 1
Thermal resistance junction to case
Rth 2
Thermal resistance junction to ambient
Min.
Typ.
6.25
90
Max. Units Test Conditions
Thermal Characteristics
o
C/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25
C unless otherwise specified).
Symbol Parameter
Vout
Maximum output voltage
Voffset
Maximum logic ground to load ground offset Vcc-50
Vin
Maximum Input voltage
Vcc max
Maximum Vcc voltage
Iin, max.
Maximum IN current
Vdg
Maximum diagnostic output voltage
Idg, max
Maximum diagnostic output current
Isd
cont.
Isd
pulsed
Diode max. pulsed current
(1)
ESD1
Electrostatic discharge voltage
(Human Body)
Min.
Vcc-50
Max.
Vcc+0.3
Vcc+0.3
5.5
Units
Test Conditions
-0.3
50
10
-5
mA
-0.3
5.5
V
-1
10
mA
Diode max. permanent current
(1)
2.2
10
4
C=100pF, R=1500
,
C=200pF, R=0
,
L=10
μ
H
ESD2
Electrostatic discharge voltage
(Machine Model)
Maximum power dissipation
(1)
Max. storage & operating junction temp.
0.5
Pd
Tj max.
Tlead
20
-40
+150
Lead temperature (soldering 10 seconds)
300
V
A
kV
W
o
C
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