參數(shù)資料
型號: IPS042G
廠商: International Rectifier
英文描述: DUAL FULLY PROTECTED POWER MOSFET SWITCH
中文描述: 雙充分保護(hù)功率MOSFET開關(guān)
文件頁數(shù): 1/10頁
文件大?。?/td> 92K
代理商: IPS042G
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS042G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60153-J
Description
The IPS042G is a fully protected dual low side SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection and drain to source active
clamp.This device combines a HEXFET POWER
MOSFET and a gate driver. It offers full protection
and high reliability required in harsh environments.
The driver allows short switching times and provides
efficient protection by turning OFF the power MOSFET
when the temperature exceeds 165
o
C or when the
drain current reaches 2A. This device restarts once
the input is cycled. The avalanche capability is
significantly enhanced by the active clamp and cov-
ers most inductive load demagnetizations.
Package
Product Summary
R
ds(on)
500m
(max)
V
clamp
50V
I
shutdown
2A
T
on
/T
off
1.5
μ
s
8-Lead SOIC
www.irf.com
1
Typical Connection
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to lead assignment for correct pin configuration)
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