參數(shù)資料
型號: IPB091N06NG
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢ Power-Transistor
中文描述: 的OptiMOS㈢功率晶體管
文件頁數(shù): 1/10頁
文件大小: 445K
代理商: IPB091N06NG
IPB091N06N G IPP091N06N G
Opti
MOS
Power-Transistor
Features
Low gate charge for fast switching applications
N-channel enhancement - normal level
175 °C operating temperature
Avalanche rated
Pb-free lead plating, RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
1)
80
A
T
C
=100 °C
66
Pulsed drain current
I
D,pulse
T
C
=25 °C
2)
320
Avalanche energy, single pulse
E
AS
I
D
=80 A,
R
GS
=25
370
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=80 A,
V
DS
=48 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
188
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
2)
See figure 3
1)
Current is limited by bondwire; with an
R
thJC
=0.8 K/W the chip is able to carry 93 A.
V
DS
60
V
R
DS(on),max SMDversion
9.1
m
I
D
80
A
Product Summary
Type
IPP091N06N G
IPB091N06N G
Package
PG-TO220-3-1
PG-TO263-3-2
Marking
091N06N
091N06N
Rev. 1.0
page 1
2006-06-20
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