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參數(shù)資料
| 型號(hào)： | INA-12063-TR1 |
| 英文描述： | 1.5 GHz Low Noise Self-Biased Transistor Amplifier |
| 中文描述： | 1.5 GHz的低噪聲自偏置晶體管放大器 |
| 文件頁(yè)數(shù)： | 2/24頁(yè) |
| 文件大?。?/td> | 351K |
| 代理商： | INA-12063-TR1 |
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6-117
INA-12063 Absolute Maximum Ratings
Absolute
Maximum
[1]
Symbol
Parameter
Units
V
d
V
c
I
c
P
in
T
j
T
STG
Supply Voltage, to Ground
Collector Voltage
V
V
7
7
Collector Current
mA
15
CW RF Input Power
Junction Temperature
dBm
°
C
°
C
13
150
Storage Temperature
-65 to 150
Thermal Resistance
[2]
:
θ
j-c
= 170
°
C/W
Notes:
1. Operation of this device above any
one of these limits may cause
permanent damage.
2. T
C
= 25
°
C (T
C
is defined to be the
temperature at the package pins
where contact is made to the
circuit board).
Electrical Specifications,
T
C
= 25
°
C, V
d
= 3 V, unless noted
Symbol
Parameters and Test Conditions
Units Min.
Typ.
Max. Std.Dev.
[3]
G
P
Power Gain (|S
21
|
2
)
f = 900 MHz
[1]
f = 250 MHz
[2]
dB
14.5
16
19
0.36
NF
Noise Figure
f = 900 MHz
[1]
f = 250 MHz
[2]
f = 900 MHz
[1]
f = 250 MHz
[2]
dB
2.0
5.0
0
-7
2.6
0.2
P
1dB
Output Power at 1 dB Gain Compression
dBm
IP
3
Third Order Intercept Point
f = 900 MHz
[1]
f = 250 MHz
[2]
dBm
15
2
I
dd
Device Current
[4]
900 MHz LNA
[1]
250 MHz IF Amp
[2]
mA
5
7
0.6
1.5
Notes:
1. See Test Circuit in Figure 32.
2. See Test Circuit in Figure 33.
3. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
4. I
dd
is the total current into Pins 1, 4, and 6 of the device, i.e. I
dd
= I
c
+ I
bias
+ I
d
.
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