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參數(shù)資料
| 型號： | INA-03100 |
| 英文描述： | GT 13C 13#16 PIN PLUG |
| 中文描述： | 低噪聲，可級聯(lián)硅雙極MMIC放大器 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 52K |
| 代理商： | INA-03100 |
6-103
INA-03100 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
50 mA
200 mW
+13 dBm
200
°
C
–65 to 200
°
C
Thermal Resistance
[2]
:
θ
jc
= 70
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
(T
MS
)
= 25
°
C.
3. Derate at 14.3 mW/
°
C for T
MS
>
186
°
C.
INA-03100 Typical Scattering Parameters
[1]
(Z
O
= 50
, T
A
= 25
°
C, I
d
= 12 mA)
S
11
S
21
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.05
0.10
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
0.35
0.35
0.33
0.31
0.27
0.23
0.19
0.16
0.13
0.12
0.13
0.18
0.40
0.81
176
172
165
150
137
125
113
99
76
51
21
–5
–52
–86
26.6
26.6
26.4
26.1
25.6
25.0
24.5
24.0
23.8
23.6
23.6
23.8
24.7
25.6
21.4
21.3
21.0
20.1
19.0
17.8
16.7
15.9
15.4
15.2
15.5
15.5
17.2
19.1
–4
–8
–36.0
–36.5
–36.4
–36.0
–37.6
–36.1
–35.1
–36.9
–36.4
–35.6
–34.1
–34.3
–30.2
–27.0
.016
.015
.015
.016
.013
.016
.018
.014
.015
.017
.020
.019
.031
.045
8
.56
.56
.56
.54
.54
.53
.53
.54
.55
.56
.58
.60
.67
.70
–1
–3
–4
–7
–8
–9
1.25
1.30
1.30
1.33
1.58
1.49
1.43
1.72
1.65
1.54
1.24
1.18
0.53
0.03
–4
–5
–15
–29
–42
–53
–63
–72
–81
–88
–97
–106
–132
–167
–13
–14
–13
–16
–21
–12
–11
–5
–13
–9
–12
–10
–12
–15
–17
–20
–25
–38
–64
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the
Avantek Microwave Semiconductors
databook.
S
12
S
22
G
P
G
P
f
3 dB
ISO
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Reverse Isolation (|S
12
|
2
)
Input VSWR
Output VSWR
50
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 1.5 GHz
f = 0.01 to 2.0 GHz
dB
dB
GHz
dB
26.0
±
0.5
2.8
37
2.0
5
3.0
5
2.5
1.0
10
200
4.5
+5
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
f = 1.5 GHz
f = 1.5 GHz
f = 1.5 GHz
f = 1.5 GHz
f = 1.5 GHz
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
dB
dBm
dBm
psec
V
mV/
°
C
3.5
5.5
Notes:
1. The recommended operating current range for this device is 8 to 20 mA. Typical performance as a function of current is
on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-03100 mounted in a 70 mil stripline package.
INA-03100 Electrical Specifications
[1,3]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions
[2]
: I
d
= 12 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
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