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參數(shù)資料
| 型號： | IN914B |
| 英文描述： | HIGH SPEED SILICON SWITCHING DIODE |
| 中文描述： | 高速硅開關(guān)二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 382K |
| 代理商： | IN914B |
HIGH SPEED SILICON SWITCHING DIODE
IN914, B
IN916
250mW
DO- 35
Glass Axial Package
FEATURES
Intended for General Purpose Application.
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
Reverses Voltage ( Continuous)
Repetitive Peak Reverse Voltage
Average Forward Current
T
A
=25oC
T
A
=150oC
Forward Current (D.C.)
Repetitive Peak Forward Current
Non Repetitive Peak Surge Current
tp=1sec
Power Dissipation
Storage Temperature
Operating ambient Temperature
SYMBOL
V
R
V
RRM
VALUE
75
100
UNIT
V
V
I
F (AV)
I
F (AV)
I
F
I
FRM
75
10
75
225
mA
mA
mA
mA
I
FSM
P
tot
T
stg
T
amb
500
250
mA
mW
oC
oC
-65 to +200
-65 to +175
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
Forward Voltage
IN914/916
1N914B
SYMBOL TEST CONDITION
V
F
I
F
=10
I
F
=100mA,
I
F
=5mA,
MIN
TYP
MAX
UNIT
1.0
1.0
0.72
V
V
V
0.62
Reverse Breakdown Voltage
Reverse Current
V
(BR)R
I
R
I
R
=100
μ
A
V
R
= 20V
V
R
= 75V
V
R
= 20V, T
j
=150oC
100
V
n
Α
μ
A
25
5
Diode Capacitance
Reverse Recovery Time
C
d
t
rr
V
R
=0, f=1MHz
I
F
=10mA to I
R
=10mA
R
L
=100
Measured at I
R
=1mA
2.5
8
pF
ns
I
F
=10mA to I
R
=60mA
R
L
=100
Measured at I
R
=1mA
4
ns
Transys
Electronics
L I
M
I T E
D
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