- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360859 > IMX9T110 TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 500MA I(C) | SC-74 PDF資料下載
參數(shù)資料
| 型號： | IMX9T110 |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 500MA I(C) | SC-74 |
| 中文描述： | 晶體管|晶體管|一對|叩| 20V的五（巴西）總裁| 500mA的一（c）|律師- 74 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 39K |
| 代理商： | IMX9T110 |
IMX9
Transistors
General purpose transistor
(isolated dual transistors)
IMX9
z
Features
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
machine.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
z
Structure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
1
and Tr
2
.
z
External dimensions
(Units : mm)
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol: X9
(1)
(2)
(3)
0.3
+
0.1
1
2
±
0
+
0
0
(6)
(5)
(4)
0.95 0.95
1.9
±
0.2
2.9
±
0.2
1.1
+
0.2
0.8
±
0.1
0~0.1
0
0.15
0.06
+
0.1
All terminals have same dimensions
z
Absolute maximum ratings
(Ta = 25
°
C)
z
Equivalent circuit
Parameter
Symbol
Limits
Unit
V
CBO
25
V
V
CEO
20
V
V
EBO
12
V
I
C
500
mA
Tj
150
°
C
Tstg
55~
+
150
°
C
Pd
300(TOTAL)
mW
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
200mW per element must not be exceeded.
Power dissipation
Tr
2
Tr
1
(4)
(5)
(6)
(3)
(2)
(1)
z
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Min.
25
20
12
560
0.18
0.5
0.5
2700
0.4
V
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
20V
V
EB
=
10V
V
CE
=
3V, I
C
=
10mA
I
C
/I
B
=
500mA/20mA
V
V
μ
A
μ
A
V
Typ.
Max.
Unit
Conditions
f
T
Ron
Cob
350
0.8
8
V
CE
=
10V, I
E
=
50mA, f
=
100MHz
I
B
=
1mA, V
i
=
100mVrms, f
=
1kHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
MHz
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Collector-emitter saturation voltage
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IMXHANTROWP | i.MX Applications Processors with Hantro＇s Multimedia Framework |
| IMXPWSWP_D | i.MX Application Processor Creating Power with Stamina White Paper White Paper |
| IMZ1 | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 100MA I(C) | SO |
| IMZ2 | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 100MA I(C) | SO |
| IMZ3A | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 100MA I(C) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IMXEBOOKDC2 | 功能描述:子卡和OEM板 E-BOOK Exp Dghtr Crd RoHS:否 制造商:BeagleBoard by CircuitCo 產(chǎn)品:BeagleBone LCD4 Boards 用于:BeagleBone - BB-Bone - Open Source Development Kit |
| IMXEBOOKDC3-E | 功能描述:子卡和OEM板 IMXEBOOKDC3-E RoHS:否 制造商:BeagleBoard by CircuitCo 產(chǎn)品:BeagleBone LCD4 Boards 用于:BeagleBone - BB-Bone - Open Source Development Kit |
| IMXLRM1AL | 制造商:Hubbell Wiring Device-Kellems 功能描述:ISTATION MODULE, W/MINI XLR,1U,AL |
| IMXLRM1BK | 制造商:Hubbell Wiring Device-Kellems 功能描述:ISTATION MODULE, W/MINI XLR,1U,BK |
| IMXLRM1EI | 制造商:Hubbell Wiring Device-Kellems 功能描述:ISTATION MODULE, W/MINI XLR,1U,EI |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。