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參數(shù)資料
| 型號： | IMX4T108 |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 18V V(BR)CEO | 50MA I(C) | SOT-25 |
| 中文描述： | 晶體管|晶體管|一對|叩| 18V的五（巴西）總裁| 50mA的一（c）|采用SOT - 25 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 57K |
| 代理商： | IMX4T108 |
EMX4 / UMX4N / IMX4
Transistors
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
!
Features
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (fT=1.5GHz)
3) Low output capacitance. (Cob=0.95pF)
!
Equivalent circuits
EMX4 / UMX4N
(3)
(2)
(1)
(4)
(5)
(6)
IMX4
(4)
(5)
(6)
(3)
(2)
(1)
!
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
30
18
3
50
300(TOTAL)
150(TOTAL)
EMX4 / UMX4N
IMX4
150
55~+150
Unit
V
mA
mW
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
Package, marking, and packaging specifications
Type
EMX4
EMT6
X4
T2R
8000
IMX4
SMT6
X4
T108
3000
UMX4N
UMT6
X4
TR
3000
Package
Marking
Code
Basic ordering unit (pieces)
!
External dimensions (Units : mm)
UMX4N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
0~0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
IMX4
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
( 6
)
( 5
)
( 4
)
0.3Min.
0.15
0.3
1.1
0.8
0~0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
Each lead has same dimensions
ROHM : EMT6
EMX4
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
1.0
1.6
!
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
hFE1 / hFE2
fT
30
18
3
27
0.5
1
0.5
270
0.5
1.6
2
V
A
V
MHz
Cob
600
1500
0.95
pF
IC
=10A
IC
=1mA
IE
=10A
VCB
=10V
VEB
=2V
VCE/IC
=10V/10mA
VCE/IC
=10V/10mA, f=200MHz
VCB/f
=10V/1MHz, IE=0A
IC/IB
=20mA/4mA
VCE/IC
=10V/10mA
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
hFE pairing
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