參數(shù)資料
型號: IM6472-4L
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | FO-57BVAR
中文描述: 晶體管| MOSFET的| N溝道| 15V的五(巴西)直資|佛57BVAR
文件頁數(shù): 2/6頁
文件大?。?/td> 35K
代理商: IM6472-4L
2
IM6472-xL Absolute Maximum Ratings (T
Flange
= 25oC)
Symbols
Parameters
Units
Ratings
IM6472-4L
15
-10
-15
I
DSS
±
25
175
-65 to +150
31
IM6472-8L
15
-10
-15
I
DSS
±
50
175
-65 to +150
38
IM6472-16L
15
-10
-15
I
DSS
±
100
175
-65 to +150
83
IM6472-32L
15
-10
-15
I
DSS
±
200
175
-65 to +150
150
V
DS
V
GS
V
GD
I
DS
I
GRF
T
CH
T
STG
P
T
[1]
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Max. Channel Temperature
Storage Temperature
Total Power Dissipation
V
V
V
A
mA
oC
oC
W
IM6472-xL Electrical Characteristics (T
Flange
= 25oC)
Part Number
Parameters
Output Power @ 1 dB
Gain Compression
I
DSQ
= 1.0 A
I
DSQ
= 2.0 A
Power-Added Efficiency
@ 1 dB Gain Compression
Drain Current @ P1dB
Power Gain @ 1 dB Gain
Compression
Gain Flatness
3rd Order Intermod Distortion
P
out
SCL
[2]
I
DSQ
26 dBm 1.0 A
29 dBm 2.0 A
Saturated Drain Current
Pinch Off Voltage
I
DS
= 63 mA
I
DS
= 125 mA
Gate-Drain Breakdown
Voltage
I
GD
= -6 mA
I
GD
= -12 mA
Transconductance
I
DS
= 1.0 A
I
DS
= 2.0 A
Thermal Resistance
(Channel to Flange)
Temperature Rise Channel to
Flange; DC on and RF off
Case Style
IM6472-4L
Min.
Typ.
IM6472-8L
Min.
Typ.
Symbols
P1dB
Units
Max.
Max.
Test Conditions
dBm
dBm
%
36.0
36.5
39.0
39.5
38
η
ADD
40
I
DS
G1dB
A
dB
1.1
9.5
1.5
2.2
8.5
3.0
8.5
7.5
G
IMD
3
dB
±
0.3
±
0.5
±
0.3
±
0.5
dBc
dBc
A
-45
-42
-45
5.0
-42
7.0
I
DSS
V
P
1.5
2.5
3.5
3.0
V
V
-4.5
-3.0
-1.5
-4.5
-3.0
-1.5
BV
GDO
V
V
-16.0
-16.0
g
m
S
S
1.3
2.5
4.0
R
TH
oC/W
4.9
T
oC
49
80
C21A
Notes:
1. See Application Note, AN 1083
2. SCL: Single Carrier Level
V
DS
= 10.0 V
Freq.= 6.4 – 7.2 GHz
Zs = Zl = 50 ohms
R
G
= 20
V
DS
= 10.0 V
Two Equal Tone Test
f
1
= 7.19 GHz
f
2
= 7.20 GHz
V
GS
= 0 V; V
DS
= 2.5 V
I. R. Method
I. R. Method; V
DS
= 10.0V
I
DS
= 1 and 2 A
V
DS
= 2.5 V
V
DS
= 2.5 V
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