
www.infineon.com/opto 1-888-Infineon (1-888-463-4636)
2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA
2–157
March 2, 2000-09
FEATURES
Very High Current Transfer Ratio (500% min.)
IL755B-1: 750% at
I
F=
IL755B-2: 1000% at
I
F
BV
CEO
>60 V
Isolation Test Voltage, 5300 V
AC or Polarity Insensitive Inputs
No Base Connection
High Isolation Resistance, 10
Low Coupling Capacitance
Standard Plastic DIP Package
Underwriters Lab Approval #E52744
VDE #0884 Available with Option 1
2.0 mA,
=1.0 mA,
V
CE
V
=5.0 V
=5.0 V
CE
RMS
12
DESCRIPTION
The IL755B is a bidirectional input, optically cou-
pled isolator consisting of two Gallium Arsenide
infrared emitters and a silicon photodarlington
sensor.
Maximum Ratings
Emitter (Drive Circuit)
Continuous Forward Current .........................60 mA
Power Dissipation at 25
°
C.......................... 100 mW
Derate Linearly from 55
°
C.................... 1.33 mW/
Detector
Collector-Emitter Breakdown Voltage .............. 60 V
Emitter-Collector Breakdown Voltage ...............12 V
Power Dissipation at 25
°
C Ambient ........... 200 mW
Derate Linearly from 25
°
C...................... 2.6 mW/
Package
Isolation Test Voltage
(PK), t=1.0 sec. ....................................5300 V
Dissipation at 25
°
C..................................... 250 mW
Derate Linearly from 25
°
C...................... 3.3 mW/
Creepage ..................................................
Clearance..................................................
Isolation Resistance
T
A
=25
°
C
≥
10
T
A
=100
°
C
≥
10
Storage Temperature.................... –55
Operating Temperature................ –55
Lead Soldering Time at 260
(at 25
°
C)
°
C
°
C
RMS
°
C
≥
≥
7.0 mm
7.0 mm
12
11
°
°
C to +150
C to +100
°
°
C
C
°
C.................... 10 sec.
V
D E
Electrical Characteristics
T
A
=25
°
C
Notes:
1. Indicates JEDEC registered data.
Sym.
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
(1)
V
F
—
1.25
1.5
V
I
F
=10 mA
Detector
Breakdown Voltage,
Collector-Emitter
BV
CEO
60
75
—
V
I
I
C
F
=1.0 mA
=0
Leakage Current,
Collector-Emitter
I
CEO
—
1.0
100
nA
V
I
CE
F
=0
=10 V
Package
Current Transfer Ratio
IL755B-1
IL755B-2
CTR
750
1000
—
—
%
V
I
I
CE
F
F
=
=5.0 V
±
2.0 mA
±
1.0 mA
Saturation Voltage,
Collector-Emitter
V
CE
sat
—
—
1.0
V
I
I
C
F
=10 mA
=
±
10 mA
Turn-On Time
Turn-Off Time
t
t
on
off
—
—
200
μ
s
V
I
R
CC
F
=
L
=100
=10 V
±
2.0 mA
.010 (.25)
typ.
.114
(2.90)
.130
(3.0)
.130
(3.30)
.150
(3.81)
.031
(0.80)
min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
°
3
°
–9
°
.300–.347
(7.62–8.81)
4
°
typ.
1
2
3
6
5
4
Collector
Emitter
Anode/
Cathode
Cathode/
Anode
NC
Dimensions in inches (mm)
IL755B
Bidirectional Input
Darlington Optocoupler