參數(shù)資料
型號: IL222A
廠商: SIEMENS A G
元件分類: 光電耦合器
英文描述: PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
中文描述: 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
封裝: SOIC-8
文件頁數(shù): 1/3頁
文件大?。?/td> 53K
代理商: IL222A
5–1
FEATURES
High Current Transfer Ratio, I
F
IL221A, 100% Minimum
IL222A, 200% Minimum
IL223A, 500% Minimum
Withstand Test Voltage, 2500 VAC
RMS
Electrical Specifications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
=1 mA,
The IL221A/IL222A/IL223A is a high current trans-
fer ratio (CTR) optocoupler with a Gallium Arsenide
infrared LED emitter and a silicon NPN photodar-
lington transistor detector.
This device has a CTR tested at an 1 mA LED cur-
rent. This low drive current permits easy interfacing
from CMOS to LSTTL or TTL.
This optocoupler is constructed in a standard
SOIC-8 foot print which makes it ideally suited for
high density applications. In addition to eliminating
through-holes requirements, this package con-
forms to standards for surface mounted devices.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current.........................60 mA
Power Dissipation at 25
°
C............................90 mW
Derate Linearly from 25
°
C ......................1.2 mW/
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................5 V
Collector-Base Breakdown Voltage..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25
°
C ......................2.0 mW/
Package
Total Package Dissipation at 25
(LED + Detector) ....................................240 mW
Derate Linearly from 25
°
C ......................3.3 mW/
Storage Temperature ...................–55
Operating Temperature ...............–55
Soldering Time at 260
°
C .............................10 sec.
°
C
°
C
°
C Ambient
°
C
°
C
°
C
°
C to +150
°
C to +100
NEW
Characteristics
(T
A
=25
°
C)
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
F
1.0
1.5
V
I
F
=1 mA
Reverse Current
I
R
0.1
100
μ
A
V
R
=6.0 V
Capacitance
C
O
25
pF
V
=0 V,
F=1 MHz
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
B
VCEO
B
VECO
30
5
V
V
I
C
=100
I
E
=100
μ
A
μ
A
Voltage,
Collector-Base
BV
CBO
70
I
C
=10
μ
A
Capacitance,
Collector-Emitter
C
CE
3.4
pF
V
CE
=10 V
Package
DC Current Transfer
Ratio
IL221A
IL222A
IL223A
CTR
DC
100
200
300
I
F
=1 mA,
V
CE
=5 V
Saturation Voltage,
Collector-Emitter
V
CEsat
1
V
I
CE
=0.5 mA,
I
F
=1 mA
Isolation Test
Voltage
V
IO
2500
VAC
RMS
t=1 sec.
Capacitance,
Input toOutput
C
IO
0.5
pF
Resistance,
Input to Output
R
IO
100
G
Dimensions in inches (mm)
1
2
3
4
Anode
Cathode
NC
NC
8
7
6
5
NC
Base
Collector
Emitter
40
°
.240
(6.10)
.154
±
.005
(3.91
±
.13)
.050 (1.27)
typ.
.040 (1.02)
.016 (.41)
.192
±
.005
(4.88
±
.13)
.004 (.10)
.008 (.20)
Lead
Coplanarity
±
.0015 (.04)
max.
.015
±
.002
(.38
±
.05)
.008 (.20)
7
°
.058
±
.005
(1.49
±
.13)
.125
±
.005
(3.18
±
.13)
Pin One ID
.120
±
.005
(3.05
±
.13)
CL
5
°
max.
R.010
(.25) max.
.020
±
.004
(.15
±
.10)
2 plcs.
IL221A/IL222A/IL223A
PHOTODARLINGTON
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
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