
www.infineon.com/opto 1-888-Infineon (1-888-463-4636)
2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA
IL1/2/5
2–86
March 17. 2000-13
Characteristics
Symbol
Min
Typ
Max
Unit
Condition
Emitter
Forward Voltage
V
F
—
1.25
1.65
V
I
F
=60 mA
Breakdown Voltage
V
BR
6.0
30
—
I
R
=10
μ
A
Reverse Current
I
R
—
0.01
10
μ
A
V
R
=6.0 V
Capacitance
C
O
—
40
—
pF
V
R
=0 V, f=1.0 MHz
Thermal Resistance Junction to Lead
R
THJL
—
750
—
K/W
—
Detector
Capacitance
C
C
C
CE
CB
EB
—
6.8
8.5
11
—
pF
V
V
V
CE
CB
EB
=5.0 V, f=1.0 MHz
=5.0 V, f=1.0 MHz
=5.0 V, f=1.0 MHz
Collector-Emitter Leakage Current
I
CEO
—
5.0
50
nA
V
CE
=10 V
Collector-Emitter Saturation Voltage
V
CESAT
—
0.25
—
V
I
CE
=1.0 mA, I
B
=20
μ
A
Base-Emitter Voltage
V
BE
—
0.65
—
V
V
CE
=10 V, I
B
=20
μ
A
DC Forward Current Gain
HFE
200
650
1800
—
V
CE
=10 V, I
B
=20
μ
A
Saturated DC Forward Current Gain
HFE
SAT
120
400
600
—
V
CE
=0.4 V, I
B
=20
μ
A
Thermal Resistance Junction to Lead
R
THJL
—
500
—
K/W
—
Package Transfer Characteristics
IL1
Saturated Current Transfer Ratio
(Collector-Emitter)
CTR
CESAT
—
75
—
%
I
F
=10 mA,
V
CE
=0.4 V
Current Transfer Ratio
(Collector-Emitter)
CTR
CE
20
80
300
I
F
=10 mA,
V
CE
=10 V
Current Transfer Ratio
(Collector-Base)
CTR
CB
—
0.25
—
I
F
=10 mA, V
CB
=9.3 V
IL2
Saturated Current Transfer Ratio
(Collector-Emitter)
CTR
CESAT
—
170
—
%
I
F
=10 mA,
V
CE
=0.4 V
Current Transfer Ratio
(Collector-Emitter)
CTR
CE
100
200
500
I
F
=10 mA,
V
CE
=10 V
Current Transfer Ratio
CTR
CB
—
0.25
—
I
F
=10 mA, V
CB
=9.3 V
IL5
Saturated Current Transfer Ratio
(Collector-Emitter)
CTR
CESAT
—
100
—
%
I
F
=10 mA,
V
CE
=0.4 V
Current Transfer Ratio
(Collector-Emitter)
CTR
CE
50
130
400
I
F
=10 mA,
V
CE
=10 V
Current Transfer Ratio
CTR
CB
—
0.25
—
I
F
=10 mA, V
CB
=9.3 V
Isolation and Insulation
Common Mode Rejection Output High
CMH
—
5000
—
V/
μ
s
V
CM
=50 V
P-P
,
R
L
=1 k
,
I
F
=10 mA
Common Mode Rejection Output Low
CML
—
—
Common Mode Coupling Capacitance
C
CM
—
0.01
—
pF
—
Package Capacitance
C
I-O
—
0.6
—
V
I-O
=0 V, f=1.0 MHz
Insulation Resistance
R
S
—
10
14
—
V
I-O
=500 V