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參數資料
| 型號： | IKW15T120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE |
| 中文描述： | 低損耗DUOPACK：在戰(zhàn)壕和場終止技術IGBT的軟，恢復快，抗何并行快恢復二極管 |
| 文件頁數： | 1/15頁 |
| 文件大?。?/td> | 450K |
| 代理商： | IKW15T120 |
IKW15T120
^
TrenchStop Series
Power Semiconductors
1
Preliminary / Rev. 1 Jul-02
Low Loss DuoPack : IGBT in Trench and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Approx. 1.0V reduced V
CE(sat)
and 0.5V reduced V
F
compared to BUP313D
Short circuit withstand time – 10
μ
s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models :
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
Package
Ordering Code
IKW15T120
1200V
15A
1.7V
150
°
C
TO-247AC
Q67040-S4516
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
1200
V
A
30
15
I
Cpuls
-
45
45
I
F
30
15
I
Fpuls
V
GE
t
SC
45
±
20
10
V
μ
s
P
tot
110
W
T
j
T
stg
-
-40...+150
-55...+150
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-247-3-1
(TO-247AC)
G
C
E
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IKW15T120 E8161 | 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IKW15T120_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:TrenchStop Series |
| IKW15T120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 110W TO247-3 |
| IKW20N60H3 | 功能描述:IGBT 晶體管 600V 20A 170W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IKW20N60H3FKSA1 | 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 40A 170W TO247-3 |
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