
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DECEMBER 1995
1996 Integrated Device Technology, Inc.
DSC-2819/4
7.03
1
DESCRIPTION
The IDT7M1014 is a 4K x 36 asynchronous high-speed
BiCMOS Dual-Port static RAM module constructed on a co-
fired ceramic substrate using 4 IDT7014 (4K x 9) asynchro-
nous Dual-Port RAMs. The IDT7M1014 module is designed
to be used as stand-alone 36-bit dual-port RAM.
This module provides two independent ports with separate
control, address, and I/O pins that permit independent and
asynchronous access for reads or writes to any location in
memory.
The IDT7M1014 module is packaged in a 142-lead ceramic
PGA (Pin Grid Array). Maximum access times as fast as 15ns
and 25ns are available over the commercial and military
temperature ranges respectively.
All IDT military modules are constructed with semiconduc-
tor components manufactured in compliance with the latest
revision of MIL-STD-883, Class B making them ideally suited
to applications demanding the highest level of performance
and reliability.
FEATURES
High-density 4K x 36 BiCMOS Dual-Port Static RAM
module
Fast access times
— Commercial: 15, 20ns
— Military: 25, 30ns
Fully asynchronous read/write operation from either port
Surface mounted LCC packages allow through-hole
module to fit on a ceramic PGA footprint
Single 5V (
±
10%) power supply
Multiple GND pins and decoupling capacitors for maxi-
mum noise immunity
Inputs/outputs directly TTL-compatible
IDT7M1014
4K x 36
BiCMOS DUAL-PORT
STATIC RAM MODULE
FUNCTIONAL BLOCK DIAGRAM
IDT7014
4K x 9
IDT7014
4K x 9
IDT7014
4K x 9
IDT7014
4K x 9
R_A
0 – 11
R_I/O
0 – 8
R_
OE
L
R_I/O
9 – 17
R_I/O
18 – 26
R_
OE
H
R_I/O
27 – 35
L_I/O
0 – 8
L_I/O
9 – 17
L_I/O
18 – 26
L_I/O
27 – 35
L_A
0 – 11
2819 drw 01
L_R/
W
0
L_R/
W
1
L_R/
W
2
L_R/
W
3
R_R/
W
0
R_R/
W
2
R_R/
W
3
R_R/
W
1
L_
OE
L
L_
OE
H
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
Integrated Device Technology, Inc.